Specification
Description
Seller Info
Brand | ST |
Model | STP75NF75 |
Encapsulate | TO-220 |
Batch number | Disassembling to-220 packaging STP75NF75 P75NF75nf7575n75 7575 |
FET type | MOS |
Leak source voltage (VDSS) | 75V |
Direct current (ID) | 80A |
Direct source drive resistance (RDS On) | 12mΩ |
Gallery voltage (VGS) | 20V |
Gallery charge (QG) | 95nC |
Injorium recovery time | 132ns |
Maximum dispersion power | 300W |
Configuration | NPN |
Work thermometer | 55-175 ° C |
Installation | Directly insert to-220 |
Application field | New energy, Appliance, 3C digital, Electronic transport, electric car, Rostometer, Smart home, Telecommunication, Security equipment, Educational education, Medical electronics, Electronic lights, Nail stickers, equipment, IoT IOT, Military/Aerospace |